Characteristics of Polycrystalline ZnO-Based Electrolyte-Solution-Gate Field-Effect Transistors Fabricated on Glass Substrates

被引：14

作者：

Koike, Kazuto ^{[1
]}

Hashimoto, Mitsuhiro ^{[1
]}

Tsuji, Kumiho ^{[1
]}

Seiwa, Yasuaki ^{[1
]}

Ogata, Ken-ichi ^{[1
]}

Sasa, Shigehiko ^{[1
]}

Inoue, Masataka ^{[1
]}

Yano, Mitsuaki ^{[1
]}

机构：

[1] Osaka Inst Technol, Nanomat Microdevices Res Ctr, Osaka 5358585, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 08期

关键词：

D O I：

10.1143/APEX.2.087001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Characteristics of ion-sensitive operation of electrolyte-solution-gate field-effect transistors (ESG-FETs) are reported with implications for the development of healthcare chips. ZnO-based polycrystalline films grown on glass substrates by sputtering were used for the ESG-FETs with the modification of the gate electrode by amino groups. The equilibrium proton transfer to/from the amino groups was found to change the gate electrode potential at a constant rate of 58 mV/pH, which successfully modulated the current flow in transistors in accordance with a conventional FET theory. A typical pH sensitivity of -0.8 mu A/pH with a small time-constant of 5 s was obtained for the ESG-FET operation with 3 x 5 mm(2) gate area. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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