Application of medium energy nuclear microprobe to semiconductor process steps

被引：17

作者：

Takai, M

Kishimoto, T

Mimura, R

Sawaragi, H

Aihara, R

机构：

[1] OSAKA UNIV, EXTREME MAT RES CTR, TOYONAKA, OSAKA 560, JAPAN

[2] EIKO ENGN CO LTD, NAKAMINATO, IBARAKI 31112, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 118卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(96)00250-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A compact nuclear microprobe system with a eutectic-alloy (AuSiBe) LMIS (liquid metal ion source) and integrated focusing optics in the accelerating column, having a maximum accelerating voltage of 200 kV, has been installed. A Be2+ microprobe at 300 keV has a minimum beam spot diameter of 80 nm at 47 pA. The microprobe could easily resolve miniaturized structures with a feature size of less than 1 mu m. Channeling contrast microscopy (CCM) analysis using the microprobe in localized implanted areas in Si could clearly indicate localized damage areas in a few min.

引用

页码：418 / 422

页数：5

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