Lateral photovoltage scanning (LPS) method for the visualization of the solid-liquid interface of Si1-xGex single crystals

被引：40

作者：

Abrosimov, NV ^{[1
]}

Lüdge, A ^{[1
]}

Riemann, H ^{[1
]}

Schröder, W ^{[1
]}

机构：

[1] Inst Crystal Growth, D-12489 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

关键词：

crystal structure; interfaces; solid solutions; X-ray topography; Czochralski method; germanium silicon alloys;

D O I：

10.1016/S0022-0248(01)01940-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 [物理学]; 070205 [凝聚态物理]; 0703 [化学]; 080501 [材料物理与化学];

摘要：

Besides the application of Si1-xGex as thin lavers in electronic devices. well-defined mixed bulk crystals are succesfully used for X-ray-, gamma- and neutron-diffraction optics. For developing growth methods for Such crystals. the shape of the growth interface and the striation pattern of the distribution Of the components and the dopants must be known. Applying for the first time, the lateral photovoltage scanning (LPS) method to different Si1-xGex mixed crystals, their striation patterns and shapes of the growth interface have been determined even Ior highly dislocated crystals where X-ray topography is not able to show the Ge-striatious. However, also dislocation slip lines call be observed clearly with LPS when using high optical excitation. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：356 / 360

页数：5

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