Metal-organic chemical vapour deposition of thin films of cobalt on different substrates: study of microstructure

被引:26
作者
Paranjape, MA [1 ]
Mane, AU
Raychaudhuri, AK
Shalini, K
Shivashankar, SA
Chakravarty, BR
机构
[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India
[3] Natl Phys Lab, New Delhi 110012, India
关键词
cobalt; thin films; metal-organic chemical vapour deposition (MOCVD); secondary ion mass spectrometry (SIMS);
D O I
10.1016/S0040-6090(02)00446-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the microstructure of thin films grown by metal-organic chemical vapour deposition using a beta-diketonate complex of cobalt, namely cobalt (11) acetylacetonate. Films were deposited on three different substrates: Si(100), thermally oxidised silicon [SiO2/Si(100)] and glass at the same time. As-grown films were characterised by X-ray diffraction, scanning electron microscopy, scanning tunnelling microscopy, atomic force microscopy and secondary ion mass spectrometry. Electrical resistivity was measured for all the films as a function of temperature. We found that films have very fine grains, resulting in high electrical resistivity Further, film microstructure has a strong dependence on the nature of the substrate and there is diffusion of silicon and oxygen into cobalt from the substrate. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:8 / 15
页数:8
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