Effect of atomic hydrogen irradiation on native oxides of InN surface

被引：12

作者：

Ohashi, T ^{[1
]}

Saito, Y ^{[1
]}

Maruyama, T ^{[1
]}

Nanishi, Y ^{[1
]}

机构：

[1] Ritsumeikan Univ, Dept Photon, Shiga 5258577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

关键词：

characterization; surfaces; molecular beam epitaxy; nitrides; semiconducting indium compounds;

D O I：

10.1016/S0022-0248(01)02120-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the effects of atomic hydrogen (H*) irradiation on native oxides of InN films by X-ray photoelectron spectroscopy, mass spectrometry, low-energy electron diffraction (LEED) and scanning electron microscopy. After H* irradiation, it was found that the higher-binding-energy side of the In4d peak drastically decreased and a clear (1 x 1) LEED pattern was observed. From these results, it is considered that H* irradiation is effective to remove native oxides on InN films with only small surface damage. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1022 / 1026

页数：5

共 7 条

[1] PHOTOEMISSION-STUDIES OF THE INITIAL-STAGES OF OXIDATION OF GASB AND INP [J].