MOVPE growth of long wavelength AIGaAsSb/InP Bragg mirrors

被引：6

作者：

Ostinelli, O

Almuneau, G

Ebnöther, M

Gini, E

Haiml, M

Bächtold, W

机构：

[1] Swiss Fed Inst Technol, Dept Informat Technol & Elect Engn, CH-8093 Zurich, Switzerland

[2] CNRS, LAAS, F-31077 Toulouse, France

[3] ETH, Ctr Quantum Elect, CH-8093 Zurich, Switzerland

[4] Avalon Photon Ltd, CH-8048 Zurich, Switzerland

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 15期

关键词：

D O I：

10.1049/el:20045373

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic distributed Bragg reflectors (DBRs) consisting of AlGaAsSb/InP quarter-wave multilayer were grown by metal-organic vapour-phase epitaxy (MOVPE) on InP substrates. The quality of antimonide MOVPE grown material has been optimised to achieve highly reflective, defect-free, DBR stacks. With 21 AlGaAsSb/InP periods, reflectivity up to 97% at 1.59 mum was measured.

引用

页码：940 / 942

页数：3

共 7 条

[1] Molecular beam epitaxy growth of 1.3 mu m high-reflectivity AlGaAsSb/AlAsSb Bragg mirror [J].