Unpinned Interface Between Al2O3 Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In0.53Ga0.47As(001)

被引：15

作者：

Shin, Byungha ^{[1
]}

Cagnon, Joel ^{[2
]}

Long, Rathnait D. ^{[1
,3
]}

Hurley, Paul K. ^{[3
]}

Stemmer, Susanne ^{[2
]}

McIntyre, Paul C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 08期

基金：

爱尔兰科学基金会;

关键词：

alumina; atomic layer deposition; energy gap; etching; Fermi level; gallium arsenide; III-V semiconductors; indium compounds; semiconductor-insulator boundaries; thermally stimulated desorption; GAAS; PASSIVATION; SILICON;

D O I：

10.1149/1.3139603

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

An unpinned interface between an Al2O3 layer deposited by atomic layer deposition (ALD) and a chemically treated n-In0.53Ga0.47As(001) is demonstrated. The starting surface was prepared by wet etching with NH4OH(aq) followed by a thermal desorption of residual As at 380 degrees C immediately before ALD. Analysis of temperature-dependent capacitance-voltage measurements suggests that the Fermi level can sweep through the bandgap of In0.53Ga0.47As, attaining true accumulation and inversion despite the presence of In oxide and In hydroxide at the interface. This is in contrast to the situation for residual As-related interfacial species, which have been reported to pin the Fermi level at oxide/III-V interfaces.

引用

页码：G40 / G43

页数：4

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