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Modeling effects of electron-velocity overshoot in a MOSFET

被引：48
作者：
Roldan, JB
Gamiz, F
LopezVillanueva, JA
Carceller, JE
机构：
[1] Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 05期
关键词：
D O I：
10.1109/16.568047
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple analytical expression to account for electron-velocity overshoot effects on the performance of very short-channel MOSFET's has been obtained, This new model can be easily included in circuit simulators of systems with a huge number of components. The influence of temperature and low-field mobility on the increase of MOSFET transconductance produced by electron-velocity overshoot as channel lengths are reduced can be easily taken into account in our model. The accuracy of this model has been verified by reproducing experimental and simulated data reported by other authors.
引用
收藏
页码：841 / 846
页数：6
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