INTRINSIC TRANSCONDUCTANCE EXTRACTION FOR DEEP-SUBMICROMETER MOSFETS

[1] Antognetti P., 1981, International Electron Devices Meeting, P574

[2] SPREADING RESISTANCE IN SUB-MICRON MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) : 27 - 29

[3] RELATIONSHIP BETWEEN MEASURED AND INTRINSIC TRANSCONDUCTANCES OF FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 448 - 450

[4] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 665 - 667

[5] JENG MC, 1987, IEDM, P710

[6] A CAPACITANCE METHOD TO DETERMINE CHANNEL LENGTHS FOR CONVENTIONAL AND LDD MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 491 - 493

[7] THE EFFECT OF HIGH FIELDS ON MOS DEVICE AND CIRCUIT PERFORMANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1386 - 1393

[8] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1846 - 1848

[9] SZE SM, 1981, PHYSICS SEMICONDUCTO, P341

[10] NEW METHOD TO DETERMINE EFFECTIVE MOSFET CHANNEL LENGTH [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 953 - 959

[1] Antognetti P., 1981, International Electron Devices Meeting, P574

[2] SPREADING RESISTANCE IN SUB-MICRON MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) : 27 - 29

[3] RELATIONSHIP BETWEEN MEASURED AND INTRINSIC TRANSCONDUCTANCES OF FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 448 - 450

[4] OBSERVATION OF ELECTRON VELOCITY OVERSHOOT IN SUB-100-NM-CHANNEL MOSFETS IN SILICON [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 665 - 667

[5] JENG MC, 1987, IEDM, P710

[6] A CAPACITANCE METHOD TO DETERMINE CHANNEL LENGTHS FOR CONVENTIONAL AND LDD MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 491 - 493

[7] THE EFFECT OF HIGH FIELDS ON MOS DEVICE AND CIRCUIT PERFORMANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (10) : 1386 - 1393

[8] EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) : 1846 - 1848

[9] SZE SM, 1981, PHYSICS SEMICONDUCTO, P341

[10] NEW METHOD TO DETERMINE EFFECTIVE MOSFET CHANNEL LENGTH [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (05) : 953 - 959