Recombination centers in electron irradiated GaInP: application to the degradation of space solar cells

被引：22

作者：

Khan, A

Yamaguchi, M

Takamoto, T

de Angelis, N

Bourgoin, JC

机构：

[1] Toyota Technol Inst, Semicond Lab, Tempa Ku, Nagoya, Aichi 4688511, Japan

[2] Univ Paris 06, Lab Milieux Desordonnes & Heterogenes, CNRS, UMR 7603, F-75252 Paris 05, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 1-3期

关键词：

GaInP; solar cell; electron irradiation; lifetime; recombination centers;

D O I：

10.1016/S0022-0248(99)00693-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Native recombination centers, as well as those introduced by electron irradiation, in p-type GaInP layers have been characterized using combined lifetime measurements and deep level transient spectroscopy. The data, acquired using junctions of solar cells, provide information on the degradation of such cells in space conditions. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：264 / 267

页数：4

共 6 条

[1] DEFECTS IN ORGANOMETALLIC VAPOR-PHASE EPITAXY-GROWN GAINP LAYERS [J].