Diffusion of hydrogen on the Si(001) surface investigated by STM atom tracking

被引：51

作者：

Hill, E ^{[1
]}

Freelon, B ^{[1
]}

Ganz, E ^{[1
]}

机构：

[1] Univ Minnesota, Dept Phys, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.60.15896

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The scanning tunneling microscopy atom-tracking technique is used to follow the individual diffusive hops of single H and D atoms on the Si(001) surface in ultrahigh vacuum. Attempt frequencies and activation energies for diffusion along the dimer row (intrarow) and between the atoms of a single Si dimer (intradimer) are extracted. For intrarow H diffusion, an activation energy of 1.75+/-0.10 eV and an attempt frequency of 10(14.5+/-0.8) Hz are found. For intradimer H diffusion, an activation energy of 1.01+/-0.05 eV and a low attempt frequency of 10(10.3+/-0.5) Hz are found. The ratios of H to D attempt frequencies for intradimer and intrarow diffusion are also determined. [S0163-1829(99)10247-9].

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收藏

页码：15896 / 15900

页数：5

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