Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopy

被引：3

作者：

Ding, Y ^{[1
]}

Park, KB

Pelz, JP

Palle, KC

Mikhov, MK

Skromme, BJ

机构：

[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[3] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[4] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2004年 / 22卷 / 04期

关键词：

D O I：

10.1116/1.1705644

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-temperature-processing-induced "double-stacking fault" cubic inclusions in 4H-SiC were studied with ballistic electron emission microscopy (BEEM). Large BEEM current and a similar to0.53 eV local reduction in the Schottky barrier height (SBH) were observed where the inclusions intersect a Pt interface, confirming the quantum-well nature of the inclusions and providing nanometer scale information about local electronic behavior. Measured spatial variations in the BEEM cur-rent are related to the inclusion orientation and local surface step structure. An observation of an anomalously low SBH is discussed, suggesting the existence of a triple- or quadruple-stacking fault inclusion. (C) 2004 American Vacuum Society.

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页码：1351 / 1355

页数：5

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