Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

被引：30

作者：

Kunert, B. ^{[1
]}

Volz, K. ^{[1
]}

Nemeth, I. ^{[1
]}

Stolz, W. ^{[1
]}

机构：

[1] Univ Marburg, Fac Phys, Ctr Mat Sci, Dept Phys, D-35032 Marburg, Germany

来源：

JOURNAL OF LUMINESCENCE | 2006年 / 121卷 / 02期

关键词：

dilute nitride; integrated optoelectronic circuits; GaP-based laser;

D O I：

10.1016/j.jlumin.2006.08.074

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：361 / 364

页数：4

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