Fabrication and microscopic photoluminescence imaging of ridge-type InGaAs quantum wires grown on a (110) cleaved plane of AlGaAs/GaAs superlattice

被引：8

作者：

Arakawa, T

Watabe, H

Nagamune, Y

Arakawa, Y

机构：

[1] Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo 106

[2] Electrotechnical Laboratory

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 09期

关键词：

D O I：

10.1063/1.117396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated ridge-type InGaAs quantum wire structures on a (110) cleaved plane of AlGaAs/GaAs superlattice using selective metalorganic chemical vapor deposition growth. The lateral width of the quantum wires was about 25 nm. Spatially resolved photoluminescence (PL) of the quantum wires was observed by using microscopic photoluminescence measurement at low temperature, showing PL from the quantum wire region and its polarization dependence. (C) 1996 American Institute of Physics.

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收藏

页码：1294 / 1296

页数：3

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