About the origin of the low wave number structures of the Raman spectra of heavily boron doped diamond films

被引:167
作者
Bernard, M
Baron, C
Deneuville, A
机构
[1] Univ Grenoble 1, F-38042 Grenoble 9, France
[2] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France
关键词
diamond films; vibrational properties characterization; p-type doping; defects;
D O I
10.1016/j.diamond.2003.11.082
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the Raman spectra of heavily boron ([B] > 3 x 10(20) cm(-3)) polycrystalline and homoepitaxial diamond films. A detailed comparison of the structures of these spectra can be done only after normalizations. As [B] increases in polycrystalline and homoepitaxial films, (i) the '1225 cm(-1)' appear identical GO the maximum of the '500 cm(-1)' band shifts to lower wavenumbers while its intensity increases GO the overall shapes of the '500 cm(-1)' bands remain similar while their full widths at half maximum are higher in the polycrystalline films. From these characteristics and previous works, the '500 cm(-1)' band is proposed to originate from local vibrational modes of boron pairs. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:896 / 899
页数:4
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