High breakdown voltage Au/Pt/GaN Schottky diodes

被引：24

作者：

Dang, GT ^{[1
]}

Zhang, AP

Mshewa, MM

Ren, F

Chyi, JI

Lee, CM

Chuo, CC

Chi, GC

Han, J

Chu, SNG

Wilson, RG

Cao, XA

Pearton, SJ

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Bell Labs, Murray Hill, NJ 07974 USA

[4] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.582312

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Au/Pt/GaN Schottky diode rectifiers were fabricated with reverse breakdown voltage (V-RB) UP to 550 V on vertically depleting structures and >2000 V on lateral devices. The figure-of-merit (V-RB)(2)/R-ON, where R-ON is the on-state resistance, had values between 4.2 and 4.8 MW cm(-2). The reverse leakage currents and forward on-voltages were still somewhat higher than the theoretical minimum values, but were comparable to SiC Schottky rectifiers reported in the literature. These devices show promise for use in ultrahigh-power switches. (C) 2000 American Vacuum Society. [S0734-2101(00)00804-6].

引用

页码：1135 / 1138

页数：4

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