Structural and photoluminescence properties of growth-induced InAs island columns in GaAs

被引：36

作者：

Solomon, GS ^{[1
]}

Trezza, JA ^{[1
]}

Marshall, AF ^{[1
]}

Harris, JS ^{[1
]}

机构：

[1] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588901

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs quantum dots layers produced by growth-induced islanding are vertically stacked with a variable thickness GaAs spacer layer. Using transmission electron microscopy, dense planar arrays of randomly ordered InAs islands are found to be vertically aligned in columns. We have compared single, 2, 5, and 10 layers of InAs islands and the vertical alignment is maintained. Atomic force microscopy shows the island size is unchanged throughout the layering process. 8 K photoluminescence shows a spectral peak shift and linewidth narrowing that we associate with electronic coupling within the columns. Variations in the GaAs spacer region produce spectral changes that are consistent with this coupling. (C) 1996 American Vacuum Society.

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页码：2208 / 2211

页数：4

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