Flat epitaxial diamond/Ir(001) interface visualized by high resolution transmission electron microscopy

被引:15
作者
Hörmann, F [1 ]
Peng, HY
Bauer, T
Li, Q
Schreck, M
Lifshitz, Y
Lee, ST
Stritzker, B
机构
[1] Univ Augsburg, Inst Phys, Lehrstuhl Expt Phys 4, D-86135 Augsburg, Germany
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[3] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Kowloon, Hong Kong, Peoples R China
关键词
chemical vapor deposition; diamond; iridium; electron microscopy; epitaxy; interface states;
D O I
10.1016/S0039-6028(02)01852-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High resolution transmission electron microscopy (HRTEM) was used to study the interface structure of epitaxial diamond crystallites deposited on Ir(001)/SrTiO3(001). The selected samples did not show any significant surface roughening of the Ir film after the nucleation step. The diamond crystallites formed a flat, sharp, and crystalline interface with the Ir film without any intermediate layer. The epitaxial relationship is diamond (001)[100] parallel to Ir(0 01)[10 0] and the misorientation of the diamond crystallites directly grown on the iridium is smaller than 1degrees. Homogeneous amorphous interlayers often observed in thick samples are attributed to delamination during cool-down induced by the large thermal misfit between diamond and the substrate. The Ir(00 I)/SrTiO3(001) interface proved to be stable in the harsh CVD plasma environment showing an excellent epitaxy without a measurable misorientation. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:525 / 529
页数:5
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