Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach

被引:155
作者
Jalan, Bharat [1 ]
Engel-Herbert, Roman [1 ]
Wright, Nicholas J. [1 ]
Stemmer, Susanne [1 ]
机构
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2009年 / 27卷 / 03期
基金
美国国家科学基金会;
关键词
aluminium compounds; electron diffraction; insulating thin films; lanthanum compounds; molecular beam epitaxial growth; stoichiometry; strontium compounds; surface reconstruction; surface roughness; X-ray diffraction; ENERGY ELECTRON-DIFFRACTION; BY-LAYER GROWTH; THIN-FILMS; INTENSITY OSCILLATIONS; SURFACE-STRUCTURES; OXIDES; SILICON; TIO2;
D O I
10.1116/1.3106610
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A hybrid molecular beam epitaxy approach for atomic-layer controlled growth of high-quality SrTiO3 films with scalable growth rates was developed. The approach uses an effusion cell for Sr, a plasma source for oxygen, and a metal-organic source (titanium tetra isopropoxide) for Ti. SrTiO3 films were investigated as a function of cation flux ratio on (001) SrTiO3 and (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) (LSAT) substrates. Growth conditions for stoichiometric insulating films were identified. Persistent (>180 oscillations) reflection high-energy electron diffraction oscillation characteristic of layer-by-layer growth were observed. The full widths at half maximum of x-ray diffraction rocking curves were similar to those of the substrates, i.e., 34 arc sec on LSAT. The film surfaces were nearly ideal with root mean square surface roughness values of less than 0.1 nm. The relationship between surface reconstructions, growth modes, and stoichiometry is discussed.
引用
收藏
页码:461 / 464
页数:4
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