Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach

被引：155

作者：

Jalan, Bharat ^{[1
]}

Engel-Herbert, Roman ^{[1
]}

Wright, Nicholas J. ^{[1
]}

Stemmer, Susanne ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2009年 / 27卷 / 03期

基金：

美国国家科学基金会;

关键词：

aluminium compounds; electron diffraction; insulating thin films; lanthanum compounds; molecular beam epitaxial growth; stoichiometry; strontium compounds; surface reconstruction; surface roughness; X-ray diffraction; ENERGY ELECTRON-DIFFRACTION; BY-LAYER GROWTH; THIN-FILMS; INTENSITY OSCILLATIONS; SURFACE-STRUCTURES; OXIDES; SILICON; TIO2;

D O I：

10.1116/1.3106610

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A hybrid molecular beam epitaxy approach for atomic-layer controlled growth of high-quality SrTiO3 films with scalable growth rates was developed. The approach uses an effusion cell for Sr, a plasma source for oxygen, and a metal-organic source (titanium tetra isopropoxide) for Ti. SrTiO3 films were investigated as a function of cation flux ratio on (001) SrTiO3 and (LaAlO3)(0.3)(Sr2AlTaO6)(0.7) (LSAT) substrates. Growth conditions for stoichiometric insulating films were identified. Persistent (>180 oscillations) reflection high-energy electron diffraction oscillation characteristic of layer-by-layer growth were observed. The full widths at half maximum of x-ray diffraction rocking curves were similar to those of the substrates, i.e., 34 arc sec on LSAT. The film surfaces were nearly ideal with root mean square surface roughness values of less than 0.1 nm. The relationship between surface reconstructions, growth modes, and stoichiometry is discussed.

引用

页码：461 / 464

页数：4

共 27 条

[11] Surface structure of SrTiO3(100)-(√5 x √5)-R26.6° [J].

Kubo, T ;

Nozoye, H .

PHYSICAL REVIEW LETTERS, 2001, 86 (09) :1801-1804

[12] REENTRANT LAYER-BY-LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF METAL-ON-METAL SUBSTRATES [J].

KUNKEL, R ;

POELSEMA, B ;

VERHEIJ, LK ;

COMSA, G .

PHYSICAL REVIEW LETTERS, 1990, 65 (06) :733-736

[13]

MICHELY T, 2004, ISLANDS MOUNDS ATOMS, DOI DOI 10.1016/S0039-6028(02)02573-6

[14] Reflection high-energy electron diffraction and atomic force microscopy studies on homoepitaxial growth of SrTiO3(001) [J].

Naito, M ;

Yamamoto, H ;

Sato, H .

PHYSICA C, 1998, 305 (3-4) :233-250

[15] Surface and interfacial structure of epitaxial SrTiO3 thin films on (001) Si grown by molecular beam epitaxy [J].

Niu, F. ;

Wessels, B. W. .

JOURNAL OF CRYSTAL GROWTH, 2007, 300 (02) :509-518

[16] Defects and transport in complex oxide thin films [J].

Ohnishi, Tsuyoshi ;

Shibuya, Keisuke ;

Yamamoto, Takahisa ;

Lippmaa, Mikk .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (10)

[17]

Posadas AB, 2007, TOP APPL PHYS, V105, P219

[18] INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

SAKAMOTO, T ;

KAWAI, NJ ;

NAKAGAWA, T ;

OHTA, K ;

KOJIMA, T .

APPLIED PHYSICS LETTERS, 1985, 47 (06) :617-619

[19] Oxide nano-engineering using MBE [J].

Schlom, DG ;

Haeni, JH ;

Lettieri, J ;

Theis, CD ;

Tian, W ;

Jiang, JC ;

Pan, XQ .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 87 (03) :282-291

[20] GROWTH-KINETICS OF CVD TIO2 - INFLUENCE OF CARRIER GAS [J].

SIEFERING, KL ;

GRIFFIN, GL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (04) :1206-1208

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