STM observation of Ga-dimers on a GaAs(001)-c(8x2)-Ga surface -: art. no. 081313

被引：13

作者：

Xu, H ^{[1
]}

Sun, YY ^{[1
]}

Li, YG ^{[1
]}

Feng, YP ^{[1
]}

Wee, ATS ^{[1
]}

Huan, ACH ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.70.081313

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using in situ scanning tunneling microscopy (STM) we have obtained high-resolution empty-state images exhibiting triple-protrusion rows on GaAs(001)-c(8x2)-Ga surface. We assign the middle protrusion rows to the surface Ga dimers in the xi model proposed by Lee [Phys. Rev. Lett. 85, 3890 (2000)]. The surface Ga dimers, which are responsible for the c(8x2) periodicity, are the key feature of the xi structure and have never been imaged in previous STM studies. The current study provides direct evidence for the xi model, while all other existing models can be readily excluded from our STM images.

引用

页码：081313 / 1

页数：4

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