Performance Enhancement of Thin-Film Transistors by Using High-Purity Semiconducting Single-Wall Carbon Nanotubes

被引：35

作者：

Fujii, Shunjiro ^{[1
]}

Tanaka, Takeshi ^{[1
]}

Miyata, Yasumitsu ^{[1
]}

Suga, Hiroshi ^{[1
]}

Naitoh, Yasuhisa ^{[1
]}

Minari, Takeo ^{[1
]}

Miyadera, Tetsuhiko ^{[1
]}

Tsukagoshi, Kazuhito ^{[1
,2
]}

Kataura, Hiromichi ^{[1
,2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058562, Japan

[2] CREST, JST, Kawaguchi, Saitama 3300012, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 07期

基金：

日本学术振兴会;

关键词：

NETWORKS; CIRCUITS;

D O I：

10.1143/APEX.2.071601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film transistors (TFTs) using a random network of semiconductor-enriched single-wall carbon nanotubes (SWCNTs) were fabricated on a SiO2/Si substrate. Semiconductor-enriched SWCNTs were extracted from a pristine sample by centrifugation using agarose gel. Prior to depositing the SWCNTs, the substrate surface was modified by self-assembly of a monolayer of aminosilanes to produce an ideal two-dimensional network structure. As a result, all the TFTs fabricated on the substrate had on/off current ratios higher than 10(4) without electrical breakdown, while TFTs fabricated using pristine SWCNTs had a broad distribution of on/off ratios from 10(1) to 10(4). This improvement in transfer characteristics demonstrates a major advantage of using semiconductor-enriched SWCNTs. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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