Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire

被引：35

作者：

Dhara, S

Datta, A

Wu, CT

Lan, ZH

Chen, KH

Wang, YL

Chen, YF

Hsu, CW

Chen, LC

Lin, HM

Chen, CC

机构：

[1] Acad Sinica, Inst Atom & Mol Sci, Taipei 11529 106, Taiwan

[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[4] Natl Taiwan Normal Univ, Dept Chem, Taipei 106, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 18期

关键词：

D O I：

10.1063/1.1738172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50 keV Ga+ focused ion beam in the fluence range of 1x10(14)-2x10(16) ions cm(-2) is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is responsible for the shift. High-temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies. (C) 2004 American Institute of Physics.

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页码：3486 / 3488

页数：3

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