Detection of interstitial Ga in GaN

被引：111

作者：

Chow, KH

Watkins, GD

Usui, A

Mizuta, M

机构：

[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

[2] NEC Corp Ltd, Syst Devices & Fundamental Res, Tsukuba, Ibaraki 3058501, Japan

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.85.2761

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the direct detection of interstitial Ga by optical detection of electron paramagnetic resonance (ODEPR) in the photoluminescence of n-type GaN after irradiation in situ at 4.2 K with 2.5 MeV electrons. It is stable upon annealing until room temperature, where it becomes mobile and trapped to form a new defect which is observed to emerge as the interstitial disappears. The time constant of the process at room temperature is similar to 200 min. The emergence of;mother ODEPR center beginning at similar to 135 K suggests even easier migration of one of the other intrinsic defects in the GaN lattice.

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页码：2761 / 2764

页数：4

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