Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition

被引:17
作者
Jin, SR
Ramsteiner, M
Grahn, HT
Ploog, KH
Zhu, ZQ
Shen, DX
Li, AZ
Metev, P
Guido, LJ
机构
[1] Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[3] Yale Univ, Dept Elect Engn & Appl Phys, New Haven, CT 06520 USA
关键词
yellow luminescence; GaN; As-doped;
D O I
10.1016/S0022-0248(99)00888-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The excitonic emissions near band edge, the donor-to-acceptor pair (DAP) emissions and the yellow luminescence (YL) in undoped GaN and As-doped GaN at a low doping level have been investigated. At 4.2 K, the intensity of the DAP emissions around 3.28 eV were observed to increase when the As concentration is increased. This enhancement has been correlated with an increase of the As-related isoelectronic centers. On the other hand, a remarkable reduction of the yellow luminescence due to the incorporation of As into GaN is found at 4.2 K, and it persists up to room temperature where the DAP signal has got quenched due to thermal ionization. These results suggest that the suppression of the YL is due to the passivation of the YL deep centers by the As-incorporation. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:56 / 60
页数:5
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