Towards understanding the emission efficiency of nitride quantum wells

被引：81

作者：

Hangleiter, A ^{[1
]}

Fuhrmann, D ^{[1
]}

Grewe, M ^{[1
]}

Hitzel, F ^{[1
]}

Klewer, G ^{[1
]}

Lahmann, S ^{[1
]}

Netzel, C ^{[1
]}

Riedel, N ^{[1
]}

Rossow, U ^{[1
]}

机构：

[1] Tech Univ Braunschweig, Phys Tech Inst, D-38106 Braunschweig, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 12期

关键词：

D O I：

10.1002/pssa.200405051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The high quantum efficiency of light emission from GaInN/GaN quantum wells despite the typically large defect density still lacks a quantitative explanation. From a detailed analysis of the efficiency of highly efficient samples we find that a reduction of the radiative probability due to free exciton dissociation is the dominant mechanism limiting the quantum efficiency. Random exciton localization is shown to be only a minor contribution.

引用

页码：2808 / 2813

页数：6

共 16 条

[11] INFLUENCE OF BARRIER HEIGHT ON CARRIER LIFETIME IN GA1-YINYP/(ALXGA1-X)1-YINYP SINGLE QUANTUM-WELLS
MICHLER, P
HANGLEITER, A
MOSER, M
GEIGER, M
SCHOLZ, F
[J]. PHYSICAL REVIEW B, 1992, 46 (11): : 7280 - 7283
[12] HIGH-POWER INGAN SINGLE-QUANTUM-WELL-STRUCTURE BLUE AND VIOLET LIGHT-EMITTING-DIODES
NAKAMURA, S
SENOH, M
IWASA, N
NAGAHAMA, S
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (13) : 1868 - 1870
[13] Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
Narukawa, Y
Kawakami, Y
Funato, M
Fujita, S
Fujita, S
Nakamura, S
[J]. APPLIED PHYSICS LETTERS, 1997, 70 (08) : 981 - 983
[14] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[15] Quantum-confined stark effect due to piezoelectric fields in GaInN strained quantum wells
Takeuchi, T
Sota, S
Katsuragawa, M
Komori, M
Takeuchi, H
Amano, H
Akasaki, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (4A): : L382 - L385
[16] GaN-based Single Mirror Light Emitting Diodes with high external quantum efficiency
Zellweger, CM
Dorsaz, J
Carlin, JF
Bühlmann, HJ
Stanley, RP
Ilegems, M
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 200 (01): : 75 - 78

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