A comparative study of spontaneous emission and carrier recombination processes in InGaAs quantum dots and GaInNAs quantum wells emitting near 1300 nm

被引：21

作者：

Bennett, AJ

Stavrinou, PN

Roberts, C

Murray, R

Parry, G

Roberts, JS

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Elect Mat & Devices, London SW7 2BZ, England

[2] Dept Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 10期

关键词：

D O I：

10.1063/1.1512683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have undertaken a comparative study of the emission properties of GaInNAs quantum wells and InGaAs quantum dots (QDs) in the temperature range 10 to 70 degreesC using p-i-n light emitting diodes (LEDs). It is shown that at 10 degreesC the external quantum efficiency of the QD LED peaks at almost 1% for low current densities, but that this efficiency rapidly falls as the current is increased further. On the other hand the maximum efficiency of the nitride samples is an order of magnitude lower than that seen in the QD LEDs but occurs at much higher currents. It is also shown that emission from the nitride samples is limited by nonradiative recombination at all currents, whereas in the QDs state filling effects and multiple-carrier processes limit the emission efficiency at high carrier densities. (C) 2002 American Institute of Physics.

引用

页码：6215 / 6218

页数：4

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