Point defect characterization of GaN and ZnO

被引：40

作者：

Look, DC ^{[1
]}

Reynolds, DC

Fang, ZQ

Hemsky, JW

Sizelove, JR

Jones, RL

机构：

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 66卷 / 1-3期

关键词：

ZnO; GaN; electron irradiation;

D O I：

10.1016/S0921-5107(99)00115-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Point defects are created in bulk ZnO and epitaxial GaN by 1-2 MeV electron irradiation at 300 K, and are studied by temperature-dependent Hall effect, photoluminescence, and deep level transient spectroscopy measurements. The N vacancy is identified as a fairly shallow donor in GaN, whereas defect identifications in ZnO are uncertain at this time. Both materials, but especially ZnO, are quite resistant to displacement damage. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：30 / 32

页数：3

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