Analytical features of K+-sensitive membrane obtained by implantation in silicon dioxide films

Potassium (K+) ion-sensitive membranes produced by the ion implantation technique are investigated. The sensing layers are fabricated by implanting K+ and Al+ ions into silicon dioxide on silicon with low energy in order to reduce the damage to the substrate during the process of implantation. The ion sensitivity of such ion-implanted layers was investigated by using C-V measurements. All devices tested have shown good sensitivities and linear responses over at least four decades of potassium activity, with good selectivity in the presence of interfering ions like NH4+, Li+ and Mg2+. (C) 2002 Elsevier Science B.V. All rights reserved.