On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures

被引：29

作者：

Lander, RJP ^{[1
]}

Kearney, MJ ^{[1
]}

Horrell, AI ^{[1
]}

Parker, EHC ^{[1
]}

Phillips, PJ ^{[1
]}

Whall, TE ^{[1
]}

机构：

[1] UNIV LOUGHBOROUGH,DEPT ELECT & ELECT ENGN,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 09期

关键词：

D O I：

10.1088/0268-1242/12/9/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A detailed comparison is made between theory and experiment for the low-temperature mobility of holes in gated oxide, coherently strained Si/SiGe heterostructures. We conclude that the mobility is mainly limited by interface impurities, conventional surface roughness and strain fluctuations; by contrast, we argue that alloy scattering is comparatively weak. Comments regarding possible mobility degradation due to oxide formation are also made.

引用

页码：1064 / 1071

页数：8

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