Atomic-scale surface structure and ultrasmooth morphology of molecular-beam-epitaxy-grown AlAs (001)-(3x2)

被引：2

作者：

Gwo, S ^{[1
]}

Ohno, H ^{[1
]}

Tokumoto, H ^{[1
]}

机构：

[1] ATP, JRCAT, TSUKUBA, IBARAKI 305, JAPAN

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.55.R1962

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the surface atomic structure and electronic properties of the molecular-beam-epitaxy-grown AlAs(001)-(3x2) film by in situ scanning tunneling microscopy and spectroscopy. A structural model is proposed for AlAs(001)-(3x2), in which the x2 ordering arises from the formation of unusual double pi-bonded As dimers along the [110] direction and the x3 ordering results from the missing As-dimer rows in the [<(1)over bar 10>] direction on the topmost As-terminated layer. Scanning tunneling spectroscopic study directly reveals the energies and spatial locations of the surface states.

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页码：R1962 / R1965

页数：4

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