Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells

被引：8

作者：

Chang, YM ^{[1
]}

Lin, HH

Chia, CT

Chen, YF

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 10673, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10673, Taiwan

[3] Natl Taiwan Normal Univ, Dept Phys, Taipei 116, Taiwan

[4] Natl Taiwan Univ, Dept Phys, Taipei 10673, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期

关键词：

D O I：

10.1063/1.1704859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Coherent phonon spectroscopy of GaInP/GaAs/GaInP single quantum wells is demonstrated with time-resolved second-harmonic generation. Coherent longitudinal optical phonons are impulsively launched via transient pump-induced field screening and stimulated Raman scattering in the well and barrier regions. A phonon mode at 9.4 THz is identified as interfacial phonon localized in the GaAs/GaInP hetero-interface. The free induced dephasing of this coherent interfacial phonon is analyzed with window-gated Fourier transform. Its dephasing time is used to characterize the interface quality of semiconductor heterostructures. (C) 2004 American Institute of Physics.

引用

页码：2548 / 2550

页数：3

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