Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

被引：140

作者：

Degraeve, R ^{[1
]}

Kaczer, B ^{[1
]}

Groeseneken, G ^{[1
]}

机构：

[1] Interuniv Microelect Ctr, B-3001 Louvain, Belgium

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 10期

关键词：

D O I：

10.1016/S0026-2714(99)00051-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An overview is given on the present understanding of oxide degradation and breakdown as a reliability problem for CMOS devices. The basics of reliability and time-to-breakdown statistics are reviewed and a correct reliability specification is defined. The test structures commonly applied for assessing oxide reliability are briefly listed. Furthermore, the present understanding of degradation phenomena during electrical stress of thin oxide layers is discussed.

引用

页码：1445 / 1460

页数：16

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