Degradation and breakdown in thin oxide layers: mechanisms, models and reliability prediction

被引:140
作者
Degraeve, R [1 ]
Kaczer, B [1 ]
Groeseneken, G [1 ]
机构
[1] Interuniv Microelect Ctr, B-3001 Louvain, Belgium
关键词
D O I
10.1016/S0026-2714(99)00051-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An overview is given on the present understanding of oxide degradation and breakdown as a reliability problem for CMOS devices. The basics of reliability and time-to-breakdown statistics are reviewed and a correct reliability specification is defined. The test structures commonly applied for assessing oxide reliability are briefly listed. Furthermore, the present understanding of degradation phenomena during electrical stress of thin oxide layers is discussed.
引用
收藏
页码:1445 / 1460
页数:16
相关论文
共 85 条
[51]   TRAP GENERATION AND OCCUPATION DYNAMICS IN SIO2 UNDER CHARGE INJECTION STRESS [J].
NISSANCOHEN, Y ;
SHAPPIR, J ;
FROHMANBENTCHKOWSKY, D .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :2024-2035
[52]   OBSERVATION OF RANDOM TELEGRAPH SIGNALS - ANOMALOUS NATURE OF DEFECTS AT THE SI/SIO2 INTERFACE [J].
OHATA, A ;
TORIUMI, A ;
IWASE, M ;
NATORI, K .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (01) :200-204
[53]   Electrical stress-induced variable range hopping conduction in ultrathin silicon dioxides [J].
Okada, K ;
Taniguchi, K .
APPLIED PHYSICS LETTERS, 1997, 70 (03) :351-353
[54]  
Okada K., 1994, 1994 INT C SOL STAT, P565
[55]  
OKADA K, 1998, VLSI, P158
[56]   Q(bd)(-) dependencies of ultrathin gate oxides on large area capacitors. [J].
Paulzen, GM .
MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) :321-324
[57]  
PIO F, 1992, C P ESREF 92, P105
[58]   Influence of soft breakdown on NMOSFET device characteristics [J].
Pompl, T ;
Wurzer, H ;
Kerber, M ;
Wilkins, RCW ;
Eisele, I .
1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL, 1999, :82-87
[59]   Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices [J].
Register, LF ;
Rosenbaum, E ;
Yang, K .
APPLIED PHYSICS LETTERS, 1999, 74 (03) :457-459
[60]   Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films [J].
Ricco, B ;
Gozzi, G ;
Lanzoni, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (07) :1554-1560