In-Situ Studies of Interfacial Bonding of High-κ Dielectrics for CMOS Beyond 22nm

被引：106

作者：

Wallace, R. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6 | 2008年 / 16卷 / 05期

关键词：

D O I：

10.1149/1.2981608

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Using in-situ synthesis and surface analysis, we examine the reactions of selected high-k dielectrics with candidate alternate channel materials, Ge and InGaAs, for CMOS applications beyond 22 nm. The study of the reaction of Hf-germanate on Ge and alumina on InGaAs are presented. The in-situ methods described enables the study of the bond formation at these interfaces, and enables a better understanding of the reaction mechanisms.

引用

页码：255 / 271

页数：17

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