Mechanism of threshold voltage shift (ΔVth) caused by negative bias temperature instability (NBTI) in deep submicron pMOSFETs

被引：43

作者：

Liu, CH

Lee, MT

Lin, CY

Chen, JK

Loh, YT

Liou, FT

Schruefer, K

Katsetos, AA

Yang, ZJ

Rovedo, N

Hook, TB

Wann, C

Chen, TC

机构：

[1] United Microelect Corp, Hsinchu 30077, Taiwan

[2] Infineon Technol Corp, Hopewell Jct, NY 12533 USA

[3] IBM Corp, Microelect Div, Hopewell Jct, NY 12533 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 4B期

关键词：

NBTI; gate oxide reliability; device physics;

D O I：

10.1143/JJAP.41.2423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly, Experiments with 1.7 nm to 3.3 nm gate dielectrics fabricated by different processes demonstrate the capability of the proposed model.

引用

页码：2423 / 2425

页数：3

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