Modeling the water related trap state created in pentacene transistors

被引：58

作者：

Pernstich, K. P. ^{[1
]}

Oberhoff, D. ^{[1
]}

Goldmann, C. ^{[1
]}

Batlogg, B. ^{[1
]}

机构：

[1] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 21期

关键词：

ORGANIC SEMICONDUCTORS; PARAMETERS; TRANSPORT;

D O I：

10.1063/1.2396924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the modeling of the water related trap state in pentacene single crystal field-effect transistors that is created by a prolonged application of a gate voltage [C. Goldmann , Appl. Phys. Lett. 88, 063501 (2006)]. The authors find a trap state narrow in energy to be appropriate to explain the steplike feature measured in the subthreshold region of the transfer characteristic. The trap state forms in an interface layer next to the gate insulator and is centered at 430 +/- 50 meV above the valence band edge. The density increases from (2 to 10.5)x10(18)/cm(3) during gate bias stress. The knowledge of the details of this defect state can help to identify the physical and chemical origin of the created trap state. (c) 2006 American Institute of Physics.

引用

页数：3

共 16 条

[1] Operating principle of polymer insulator organic thin-film transistors exposed to moisture -: art. no. 074504 [J].

Bäcklund, TG ;

Osterbacka, R ;

Stubb, H ;

Bobacka, J ;

Ivaska, A .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)

[2] Organic semiconductors:: A theoretical characterization of the basic parameters governing charge transport [J].

Brédas, JL ;

Calbert, JP ;

da Silva, DA ;

Cornil, J .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2002, 99 (09) :5804-5809

[3] Effects of humidity on unencapsulated poly(thiophene) thin-film transistors [J].

Chabinyc, ML ;

Endicott, F ;

Vogt, BD ;

DeLongchamp, DM ;

Lin, EK ;

Wu, YL ;

Liu, P ;

Ong, BS .

APPLIED PHYSICS LETTERS, 2006, 88 (11)

[4] Evidence of water-related discrete trap state formation in pentacene single-crystal field-effect transistors [J].

Goldmann, C ;

Gundlach, DJ ;

Batlogg, B .

APPLIED PHYSICS LETTERS, 2006, 88 (06)

[5] Determination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density [J].

Goldmann, C ;

Krellner, C ;

Pernstich, KP ;

Haas, S ;

Gundlach, DJ ;

Batlogg, B .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (03)

[6] Electrical instabilities in organic semiconductors caused by trapped supercooled water [J].

Gomes, HL ;

Stallinga, P ;

Cölle, M ;

de Leeuw, DM ;

Biscarini, F .

APPLIED PHYSICS LETTERS, 2006, 88 (08)

[7] Moisture induced surface polarization in a poly(4-vinyl phenol) dielectric in an organic thin-film transistor [J].

Jung, T ;

Dodabalapur, A ;

Wenz, R ;

Mohapatra, S .

APPLIED PHYSICS LETTERS, 2005, 87 (18) :1-3

[8] Bias-dependent generation and quenching of defects in pentacene [J].

Lang, DV ;

Chi, X ;

Siegrist, T ;

Sergent, AM ;

Ramirez, AP .

PHYSICAL REVIEW LETTERS, 2004, 93 (07) :076601-1

[9] Amorphouslike density of gap states in single-crystal pentacene [J].

Lang, DV ;

Chi, X ;

Siegrist, T ;

Sergent, AM ;

Ramirez, AP .

PHYSICAL REVIEW LETTERS, 2004, 93 (08) :086802-1

[10] Humidity effect on electrical performance of organic thin-film transistors [J].

Li, DW ;

Borkent, EJ ;

Nortrup, R ;

Moon, H ;

Katz, H ;

Bao, ZN .

APPLIED PHYSICS LETTERS, 2005, 86 (04) :042105-1

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