Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires

被引：88

作者：

Li, Ping-Jian ^{[1
,2
]}

Liao, Zhi-Min ^{[1
,2
]}

Zhang, Xin-Zheng ^{[1
,2
]}

Zhang, Xue-Jin ^{[1
,2
]}

Zhu, Hui-Chao ^{[1
,2
]}

Gao, Jing-Yun ^{[1
,2
]}

Laurent, K. ^{[3
]}

Leprince-Wang, Y. ^{[3
]}

Wang, N. ^{[4
]}

Yu, Da-Peng ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China

[3] Univ Paris Est, CNRS, UMR 8108, LPMDI, F-77454 Marne La Vallee 2, France

[4] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

NANO LETTERS | 2009年 / 9卷 / 07期

基金：

中国国家自然科学基金;

关键词：

FIELD-EFFECT TRANSISTORS; ARRAYS; DIODE; FILMS; PHOTODETECTORS; TRANSPORT;

D O I：

10.1021/nl803443x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Futhermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10(3) and a low forward turn-on voltage of similar to 1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation In air at room temperature. The high photocurrent/dark current ratio (3.2 x 10(4)) reveals that the diode has a potential as extreme sensitive UV photodetectors.

引用

页码：2513 / 2518

页数：6

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