Single-electron transistors (SETs) with Nb/Nb oxide system fabricated by atomic force microscope (AFM) nano-oxidation process

被引：26

作者：

Shirakashi, J ^{[1
]}

Matsumoto, K ^{[1
]}

Miura, N ^{[1
]}

Konagai, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL, MEGURO KU, TOKYO 152, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 9AB期

关键词：

atomic force microscope (AFM); anodization; surface modification; niobium (Nb); Nb oxide; single-electron transistors (SETs); single-electron charging effects; Coulomb blockade oscillation;

D O I：

10.1143/JJAP.36.L1257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An atomic force microscope (AFM)-based anodic oxidation technique, which is based on selective oxidation of metal thin Blm by anodization, was developed for the fabrication of niobium (Nb)/Nb oxide-based ultra-small tunnel junction devices. Double junction devices without any gate structures and double junction SETs with side-gate structure were fabricated using this technique, and single-electron charging effects were clearly observed at 100K.

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收藏

页码：L1257 / L1260

页数：4

相关论文

共 17 条

[1] DEVICE FABRICATION BY SCANNED PROBE OXIDATION [J].

DAGATA, JA .

SCIENCE, 1995, 270 (5242) :1625-1626

[2] SINGLE-ELECTRON TUNNELING COEXISTING WITH THE BARRIER SUPPRESSION [J].

KOROTKOV, AN ;

NAZAROV, YV .

PHYSICA B, 1991, 173 (03) :217-222

[3] EFFECT OF THE IMAGE CHARGE ON SINGLE-ELECTRON TUNNELING [J].

KOROTKOV, AN .

PHYSICAL REVIEW B, 1994, 49 (16) :11508-11510

[4] SPECIFIC CAPACITANCE OF JOSEPHSON TUNNEL-JUNCTIONS [J].

MAGERLEIN, JH .

IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) :286-289

[5] IV CHARACTERISTICS OF COUPLED ULTRASMALL-CAPACITANCE NORMAL TUNNEL-JUNCTIONS [J].

MULLEN, K ;

BENJACOB, E ;

JAKLEVIC, RC ;

SCHUSS, Z .

PHYSICAL REVIEW B, 1988, 37 (01) :98-105

[6]

Nakamura Y, 1996, APPL PHYS LETT, V68, P275, DOI 10.1063/1.115661

[7] 100-K operation of Al-based single-electron transistors [J].

Nakamura, Y ;

Chen, CD ;

Tsai, JS .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (11A) :L1465-L1467

[8] Surface modification of niobium (Nb) by atomic force microscope (AFM) nano-oxidation process [J].

Shirakashi, J ;

Ishii, M ;

Matsumoto, K ;

Miura, N ;

Konagai, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (11B) :L1524-L1527

[9] Nb/Nb oxide-based planar-type metal/insulator/metal (MIM) diodes fabricated by atomic force microscope (AFM) nano-oxidation process [J].

Shirakashi, J ;

Matsumoto, K ;

Miura, N ;

Konagai, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (8B) :L1120-L1122

[10] Single-atom point contact devices fabricated with an atomic force microscope [J].

Snow, ES ;

Park, D ;

Campbell, PM .

APPLIED PHYSICS LETTERS, 1996, 69 (02) :269-271