Direct growth of patterned graphene on SiO2 substrates without the use of catalysts or lithography

被引：74

作者：

Kim, Yong Seung ^{[1
,2
]}

Joo, Kisu ^{[3
,4
]}

Jerng, Sahng-Kyoon ^{[1
,2
]}

Lee, Jae Hong ^{[1
,2
]}

Yoon, Euijoon ^{[4
,5
]}

Chun, Seung-Hyun ^{[1
,2
]}

机构：

[1] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea

[2] Sejong Univ, Dept Phys, Seoul 143747, South Korea

[3] Seoul Natl Univ, Grad Sch Convergence Sci & Technol, Dept Nano Sci & Technol, Suwon 443270, South Korea

[4] Seoul Natl Univ, Adv Inst Convergence Technol, Energy Semicond Res Ctr, Suwon 443270, South Korea

[5] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

来源：

NANOSCALE | 2014年 / 6卷 / 17期

基金：

新加坡国家研究基金会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; FEW-LAYER GRAPHENE; LARGE-AREA; FILMS; TRANSPARENT; HYDROGEN;

D O I：

10.1039/c4nr02001d

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

We demonstrate a one-step fabrication of patterned graphene on SiO2 substrates through a process free from catalysts, transfer, and lithography. By simply placing a shadow mask during the plasma enhanced chemical vapor deposition (PECVD) of graphene, an arbitrary shape of graphene can be obtained on SiO2 substrate. The formation of graphene underneath the shadow mask was effectively prevented by the low-temperature, catalyst-free process. Growth conditions were optimized to form polycrystalline graphene on SiO2 substrates and the crystalline structure was characterized by Raman spectroscopy and transmission electron microscopy (TEM). Patterned graphene on SiO2 functions as a field-effect device by itself. Our method is compatible with present device processing techniques, and should be highly desirable for the proliferation of graphene applications.

引用

页码：10100 / 10105

页数：6

共 36 条

[1]

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[2]

Direct growth of few-layer graphene films on SiO2 substrates and their photovoltaic applications [J].