Electrical and noise characterization of suspended silicon wires

被引：8

作者：

Macucci, A ^{[1
]}

Pellegrini, B ^{[1
]}

Pennelli, G ^{[1
]}

Piotto, M ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz, I-56122 Pisa, Italy

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 61-2卷

关键词：

nanowires; silicon; flicker noise; cryogenic; micromachining;

D O I：

10.1016/S0167-9317(02)00439-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the fabrication of suspended silicon nanowires using 1 mum resolution conventional photolithography, anisotropic wet etching and thermal oxidation. A minimum transverse dimension of about 50 nm was achieved in some of the wires. We characterized the wires from the electrical and noise points of view, comparing the behavior at room temperature and at 77 K, and discuss possible hypotheses to explain the observed differences. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：701 / 705

页数：5

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