Structure, composition and electro-optical properties of n-type amorphous and microcrystalline silicon thin films

被引：5

作者：

Martins, R ^{[1
]}

Macarico, A ^{[1
]}

Vieira, M ^{[1
]}

Ferreira, I ^{[1
]}

Fortunato, E ^{[1
]}

机构：

[1] INST DEV NEW TECHNOL, CTR EXCELLENCE MICROELECT & OPTOELECT PROC, P-2825 MONTE DE CAPARICA, PORTUGAL

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1997年 / 76卷 / 03期

关键词：

D O I：

10.1080/01418639708241090

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper deals with the structure, composition and electro-optical characteristics of n-type amorphous and microcrystalline silicon thin films produced by plasma-enhanced chemical vapour deposition in a hydrogen-helium mixture. In addition, special emphasis is given to the role that hydrogen incorporation plays in the film's properties and in the characteristics of n-type microcrystalline films presenting simultaneously optical gaps of about 2.3 eV (controlled by the hydrogen content in the film), a dark conductivity of 6.5 S cm(-1) and a Hall mobility of about 0.86 cm(2) V-1 s(-1), the highest combined values for n-type microcrystalline silicon films, as far as we know.

引用

页码：249 / 258

页数：10

共 31 条

[1]

BROGUEIRA P, 1995, MATER RES SOC S P, V377, P57

[2] MICROCRYSTALLIZATION FORMATION IN SILICON-CARBIDE THIN-FILMS [J].