MICROCRYSTALLIZATION FORMATION IN SILICON-CARBIDE THIN-FILMS

被引：32

作者：

DEMICHELIS, F

PIRRI, CF

TRESSO, E

机构：

[1] Dipartimento di Fisica del Politecnico di Torino, Torino

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1992年 / 66卷 / 01期

关键词：

D O I：

10.1080/13642819208221301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work, two different methods of promoting microcrystal formation in the amorphous network of hydrogenated silicon carbide (SiC:H) have been investigated: glow-discharge plasma-enhanced chemical vapour deposition (PECVD) with high hydrogen dilution and high power density, and annealing of device-quality amorphous SiC:H films. The microcrystalline SiC:H films directly produced by PECVD have a high electrical conductivity (10(-5) OMEGA-1 cm-1), a large energy gap (2-2.1 eV) and they are hydrogenated. The annealed films have a high electrical conductivity (7 x 10(-4) OMEGA-1 cm-1) and a smaller optical bandgap and they do not contain hydrogen.

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页码：135 / 146

页数：12

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