Chemical kinetics in chemical vapor deposition: growth of silicon dioxide from tetraethoxysilane (TEOS)

被引：60

作者：

Coltrin, ME ^{[1
]}

Ho, P ^{[1
]}

Moffat, HK ^{[1
]}

Buss, RJ ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

THIN SOLID FILMS | 2000年 / 365卷 / 02期

关键词：

chemical vapor deposition; tetraethylsiloxane; microelectronics;

D O I：

10.1016/S0040-6090(99)01059-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical reactions in the gas-phase and on surfaces are important in the chemical vapor deposition (CVD) of materials for microelectronic applications. General approaches for modeling the homogeneous and heterogeneous kinetics in CVD are discussed. A software framework for implementing the theory utilizing the CHEMKIN suite of codes is presented. Specific examples are drawn from the CVD of SiO2 using tetraethoxysilane (TEOS). Experimental molecular beam reactive-sticking coefficient studies were employed to extract surface-reaction rate constants. Numerical simulations were used to analyze the molecular-beam experiments and low-pressure tube furnace data, illustrating the general modeling approach. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：251 / 263

页数：13

共 68 条

[51] SIMULATION OF CARBON DOPING OF GAAS DURING MOVPE [J].