LOW-PRESSURE CVD OF SILICON-NITRIDE

被引：90

作者：

ROENIGK, KF

JENSEN, KF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 07期

关键词：

D O I：

10.1149/1.2100756

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1777 / 1785

页数：9

共 42 条

[1]

ARIS R, 1956, P R SOC LONDON A, V232, P57

[2] THE LPCVD POLYSILICON PHOSPHORUS DOPED INSITU AS AN INDUSTRIAL-PROCESS [J].

BAUDRANT, A ;

SACILOTTI, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1109-1116

[3] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].

BEAN, KE ;

GLEIM, PS ;

YEAKLEY, RL ;

RUNYAN, WR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :733-&

[4]

Bird R. B., 1960, TRANSPORT PHENOMENA

[5]

BROWN WA, 1979, SOLID STATE TECH JUL, P51

[6] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS [J].

CHU, TL ;

LEE, CH ;

GRUBER, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :717-&

[7] STEADY-STATE MASS-TRANSFER WITH HOMOGENEOUS AND HETEROGENEOUS REACTIONS [J].

DANG, VD .

AICHE JOURNAL, 1983, 29 (01) :19-25

[8] STOICHIOMETRY AND MASKING ABILITY OF LPCVD SILICON-NITRIDE AGAINST ARSENIC DIFFUSION [J].

DIXIT, A ;

CHEN, CS ;

VOLK, CE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2239-2242

[9] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES [J].

DOO, VY ;

KERR, DR ;

NICHOLS, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :61-&

[10]

EBSWORTH EAV, 1963, VOLATILE SILICON COM

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