ANALYSIS OF MULTICOMPONENT LPCVD PROCESSES - DEPOSITION OF PURE AND INSITU DOPED POLY-SI

被引：75

作者：

ROENIGK, KF

JENSEN, KF

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 02期

关键词：

D O I：

10.1149/1.2113863

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：448 / 454

页数：7

共 19 条

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[9] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J].

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