X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

被引：93

作者：

Deng, R. ^{[1
]}

Yao, B. ^{[1
,2
]}

Li, Y. F. ^{[2
]}

Zhao, Y. M. ^{[2
]}

Li, B. H. ^{[2
]}

Shan, C. X. ^{[2
]}

Zhang, Z. Z. ^{[2
]}

Zhao, D. X. ^{[2
]}

Zhang, J. Y. ^{[2
]}

Shen, D. Z. ^{[2
]}

Fan, X. W. ^{[2
]}

机构：

[1] Jilin Univ, Dept Phys, Changchun 130023, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Lab Excited State Proc, Changchun 130033, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 02期

基金：

中国国家自然科学基金;

关键词：

conduction bands; II-VI semiconductors; nickel compounds; semiconductor heterojunctions; valence bands; X-ray photoelectron spectra; zinc compounds; LIGHT-EMITTING-DIODES; SEMICONDUCTORS; FABRICATION;

D O I：

10.1063/1.3072367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Valence-band offset (VBO) of n-ZnO/p-NiO heterojunction has been investigated by x-ray photoelectron spectroscopy. Core levels of Zn 2p and Ni 2p were used to align the VBO of n-ZnO/p-NiO heterojunction. It was found that n-ZnO/p-NiO heterojunction has a type-II band alignment and its VBO is determined to be 2.60 +/- 0.20 eV, and conduction-band offset is deduced to be 2.93 +/- 0.20 eV. The experimental VBO value is in good agreement with the calculated value based on the electron affinity of ZnO and NiO.

引用

页数：3

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