Unpinned metal gate/high-κ GaAs capacitors:: Fabrication and characterization

被引：76

作者：

Shahrjerdi, Davood ^{[1
]}

Oye, Michael M. ^{[1
]}

Holmes, Archie L., Jr. ^{[1
]}

Banerjee, Sanjay K. ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期

关键词：

D O I：

10.1063/1.2234837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fabrication of GaAs metal-oxide-semiconductor capacitors (MOSCAPs) with an unpinned interface is reported. The MOSCAP structure consists of a few monolayers of germanium grown in a molecular beam epitaxy (MBE) system in order to terminate an MBE-grown silicon-doped (100) GaAs layer. An ex situ HfO2 high-kappa dielectric with an equivalent oxide thickness of 12 A was deposited by using a dc magnetron sputtering system. A midgap interface state density (D-it) of 5x10(11) eV(-1) cm(-2) was measured using the high-frequency conductance technique. A rapid thermal annealing study was performed in order to examine the integrity of the gate stack at different temperatures. In addition, a forming gas anneal at 400 degrees C appears to significantly reduce the midgap D-it revealed by probing the frequency dispersion behavior of the MOSCAPs. (c) 2006 American Institute of Physics.

引用

页数：3

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