Spontaneous strains and gap in graphene on boron nitride

被引：107

作者：

San-Jose, Pablo ^{[1
]}

Gutierrez-Rubio, A. ^{[1
]}

Sturla, Mauricio ^{[1
]}

Guinea, Francisco ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 07期

基金：

欧洲研究理事会;

关键词：

DIRAC FERMIONS; SUPERLATTICES; TRANSITION;

D O I：

10.1103/PhysRevB.90.075428

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction between a graphene layer and a hexagonal boron nitride (hBN) substrate induces lateral displacements and strains in the graphene layer. The displacements lead to the appearance of commensurate regions and the existence of an average gap in the electronic spectrum of graphene. We present a simple, but realistic, model, with which the displacements, strains, and spectral gap can be derived analytically from the adhesion forces between hBN and graphene. When the lattice axes of graphene and the substrate are aligned, strains reach a value of the order of 2%, leading to effective magnetic fields above 100 T. The combination of strains and induced scalar potential gives a sizable contribution to the electronic gap. Commensuration effects are negligible due to the large stiffness of graphene.

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页数：8

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