Adatom pairing structures for Ge on Si(100): The initial stage of island formation

被引：51

作者：

Qin, XR ^{[1
]}

Lagally, MG ^{[1
]}

机构：

[1] UNIV WISCONSIN,MADISON,WI 53706

来源：

SCIENCE | 1997年 / 278卷 / 5342期

关键词：

D O I：

10.1126/science.278.5342.1444

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

With the use of scanning tunneling microscopy, it is shown that germanium atoms adsorbed on the (100) surface of silicon near room temperature form chainlike structures that are tilted from the substrate dimer bond direction and that consist of two-atom units arranged in adjoining substrate troughs, These units are distinctly different from surface dimers. They may provide the link missing in our understanding of the elementary processes in epitaxial film growth: the step between monomer adsorption and the initial formation of two-dimensional growth islands.

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页码：1444 / 1447

页数：4

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